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STD664S

SamHop Microelectronics
Part Number STD664S
Manufacturer SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Oct 15, 2014
Detailed Description Green Product STU664S STD664S Ver 1.0 SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effe...
Datasheet PDF File STD664S PDF File

STD664S
STD664S

Overview
Green Product STU664S STD664S Ver 1.
0 SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 30A RDS(ON) (mΩ) Max 20 @VGS=10V FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G S G D S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c a Limit 60 ±20 TC=25°C TC=70°C 30 24 88 100 TC=25°C TC=70°C 42 27 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice.
Jun,05,2013 1 www.
samhop.
com.
tw STU664S STD664S Ver 1.
0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=48V , VGS=0V 60 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VDS=VGS , ID=250uA VGS=10V , ID=15A VDS=10V , ID=15A 2 2.
6 16 22 2190 140 105 4 20 V m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDS=25V,VGS=0V f=1.
0MHz VDD=30V ID=1A VGS=10V RGEN= 6 ohm VDS=30V,ID=15A,VGS=10V VDS=30V,ID=15A, VGS=10V 47 31 62 13 36 6 12 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTIC...


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