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STM4639T

SamHop Microelectronics
Part Number STM4639T
Manufacturer SamHop Microelectronics
Description P-Channel Enhancement Mode Field Effect Transistor
Published Oct 16, 2014
Detailed Description Green Product STM4639T Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PR...
Datasheet PDF File STM4639T PDF File

STM4639T
STM4639T

Overview
Green Product STM4639T Ver 1.
1 S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -10A R DS(ON) (m Ω) Max 12.
5 @ VGS=-10V 16.
5 @ VGS=-4.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TA=25°C TA=70°C Limit -30 ±24 -10 -8 -56 156 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2.
5 1.
6 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice.
Dec,24,2013 1 www.
samhop.
com.
tw STM4639T Ver 1.
1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-10mA VDS=-24V , VGS=0V Min -30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance c VGS= ±24V , VDS=0V -1 ±10 uA uA VDS=VGS , ID=-0.
5mA VGS=-10V , ID=-5A VGS=-4.
5V , ID=-5A -1.
0 -1.
7 10 13 -3.
0 12.
5 16.
5 V m ohm m ohm pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=-10V,VGS=0V f=1.
0MHz 3375 768 352 46 60 210 57 62 7.
6 16 -1.
8 VDD=-15V ID=-5A VGS=-10V RGEN= 4.
7 ohm VDS=-24V,ID=-10A,VGS=-10V VDS=-24V,ID=-10A, VGS=-10V ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM...


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