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STM4639


Part Number STM4639
Manufacturer SamHop Microelectronics
Title P-Channel Enhancement Mode Field Effect Transistor
Description Green Product STM4639 Ver 2.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V I...
Features Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Procteced D D D 5 6 7 8 4 3 2 1 G S S S SO-8 1 D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage...

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STM4633 : STM4633 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID -7.0A R DS(ON) (m Ω) Max 33 @ VGS=-10V 52 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Drain Current-Continuous a TA=70°C IDM E AS PD TJ, TSTG -Pulsed b d Limit -30 ±20 -7 -5.6 -40 20 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C.

STM4635 : STM4635 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Procteced ID -7A R DS(ON) (m Ω) Max 33 @ VGS=-10V 50 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit -40 ±20 TA=25°C TA=70°C -7 -5.6 -39 35 TA=25°C TA=70°C 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C -Pulsed Single Pulse Avalanche Energy d Maximum Power Dissipati.

STM4637 : STM4637 S a mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID -7.7A R DS(ON) (m Ω) Max 30 @ VGS=-10V 48 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TA=25°C Limit -30 ±20 -7.7 -35 37 2.5 -55 to 150 Units V V A A mJ W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C Operating Juncti.

STM4639T : Green Product STM4639T Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -10A R DS(ON) (m Ω) Max 12.5 @ VGS=-10V 16.5 @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TA=25°C TA=70°C Limit -30 ±24 -10 -8 -56 156 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°.




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