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AO3407

Alpha & Omega Semiconductors
Part Number AO3407
Manufacturer Alpha & Omega Semiconductors
Description 30V P-Channel MOSFET
Published Oct 28, 2014
Detailed Description AO3407 30V P-Channel MOSFET General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON)...
Datasheet PDF File AO3407 PDF File

AO3407
AO3407

Overview
AO3407 30V P-Channel MOSFET General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) -30V -4.
1A < 52mΩ < 87mΩ SOT23 Top View Bottom View D D D S G S G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG Maximum -30 ±20 -4.
1 -3.
5 -25 1.
4 0.
9 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 70 100 63 Max 90 125 80 Units ° C/W ° C/W ° C/W Rev 5: Nov 2011 www.
aosmd.
com Page 1 of 5 AO3407 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-4.
1A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.
5V, ID=-3A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-4.
1A IS=-1A,VGS=0V TJ=125° C -1.
4 -25 34 52 54 10 -0.
7 -1 -2 520 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3.
5 100 65 7.
5 9.
2 VGS=-10V, VDS=-15V, ID=-4.
1A 4.
6 1.
6 2.
2 7.
5 VGS=-10V, VDS=-15V, RL=3.
65Ω, RGEN=3Ω IF=-4.
1A, dI/dt=100A/µs 5.
5 19 7 11 5.
3 11.
5 11 6 52 73 87 -1.
9 Min -30 -1 -5 ±100 -2.
4 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance ...


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