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Si2302DDS

Vishay
Part Number Si2302DDS
Manufacturer Vishay
Description N-Channel MOSFET
Published Nov 9, 2014
Detailed Description www.vishay.com Si2302DDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: O2 1 G Top ...
Datasheet PDF File Si2302DDS PDF File

Si2302DDS
Si2302DDS

Overview
www.
vishay.
com Si2302DDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: O2 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max.
() at VGS = 4.
5 V RDS(on) max.
() at VGS = 2.
5 V Qg typ.
(nC) ID (A) Configuration 2 S 20 0.
057 0.
075 3.
5 2.
9 Single FEATURES • TrenchFET® power MOSFET • 100 % Rg tested • Material categorization:  for definitions of compliance please see www.
vishay.
com/doc?99912 APPLICATIONS • Load switching for portable devices • DC/DC converter G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SOT-23 Si2302DDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL 5s Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) a Pulsed drain current (t = 300 μs) b Continuous source current (diode conduction) a Power dissipation a Operating junction and storage temperature range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg 20 ±8 2.
9 2.
3 10 0.
72 0.
86 0.
55 -55 to +150 STEADY STATE 20 ±8 2.
6 2.
1 10 0.
6 0.
71 0.
46 -55 to +150 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a Maximum junction-to-foot t5s Steady state Steady state Notes a.
Surface mounted on 1" x 1" FR4 board b.
Pulse width limited by maximum junction temperature SYMBOL RthJA RthJF TYPICAL 120 140 62 MAXIMUM 145 175 78 UNIT °C/W S11-2528-Rev.
A, 26-Dec-11 1 Document Number: 63653 For technical questions, contact: pmostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com Si2302DDS Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN.
TYP.
MAX.
UNIT Static Drain-source breakdown voltage Gate-threshold voltage VDS VGS(th) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA 20...


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