DatasheetsPDF.com

SI2302DS

NXP
Part Number SI2302DS
Manufacturer NXP
Description N-channel FET
Published Apr 8, 2005
Detailed Description SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 — 20 November 2001 M3D088 Product data 1. Descripti...
Datasheet PDF File SI2302DS PDF File

SI2302DS
SI2302DS

Overview
SI2302DS N-channel enhancement mode field-effect transistor Rev.
02 — 20 November 2001 M3D088 Product data 1.
Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability: SI2302DS in SOT23.
2.
Features s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.
3.
Applications s Battery management s High speed switch s Low power DC to DC converter.
4.
Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 Simplified outline Symbol source (s) drain (d) g 1 Top view 2 MSB003 MBB076 d s SOT23 1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.
V.
Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor 5.
Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tsp = 25 °C; VGS = 4.
5 V Tsp = 25 °C VGS = 4.
5 V; ID = 3.
6 A VGS = 2.
5 V; ID = 3.
1 A Typ − − − − 56 77 Max 20 2.
5 0.
83 150 85 115 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tsp = 25 °C Tsp = 25 °C; VGS = 4.
5 V; Figure 2 and 3 Tsp = 70 °C; VGS = 4.
5 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions Tj = 25 to 150 °C Min − − − − − − −65 −65 − Max 20 ±8 2.
5 2 10 0.
83 +150 +150 0.
7 Unit V V A A A W °C °C A Source-drain diode 9397 750 09107 © Koninklijke Philips Electronics N.
V.
2001.
All rights reserved.
Product data Rev.
02 — 20 November 2...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)