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H30R100

Infineon Technologies
Part Number H30R100
Manufacturer Infineon Technologies
Description Reverse Conducting IGBT
Published Nov 20, 2014
Detailed Description Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • 1.5V Forward voltage of monolithic ...
Datasheet PDF File H30R100 PDF File

H30R100
H30R100

Overview
Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • 1.
5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant Applications: • Microwave Oven • Soft Switching Applications IHW30N100R q C G E PG-TO-247-3 Type VCE IHW30N100R 1000V IC 30A VCE(sat),Tj=25°C 1.
5V Tj,max Marking 175°C H30R100 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1000V, Tj ≤ 175°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s Symbol VCE IC ICpuls IF IFpuls VGE Ptot Tj Tstg - Package PG-TO-247-3 Value 1000 60 30 90 90 60 30 90 ±20 ±25 412 -40.
.
.
+175 -55.
.
.
+175 260 Unit V A V W °C °C 1 J-STD-020 and JESD-022 Power Semiconductors 1 Rev.
2.
2 Nov 08 Soft Switching Series IHW30N100R q Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Symbol RthJC RthJCD RthJA Conditions Max.
Value 0.
36 0.
36 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitt...


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