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2SC4576

Panasonic
Part Number 2SC4576
Manufacturer Panasonic
Description Power Transistors
Published Dec 4, 2014
Detailed Description Power Transistors 2SC4576 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Uni...
Datasheet PDF File 2SC4576 PDF File

2SC4576
2SC4576

Overview
Power Transistors 2SC4576 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCER VCEO VEBO ICP IC PC 1400 1400 700 5 1.
0 0.
3 20 1.
4 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V V A A W ˚C ˚C 13.
5±0.
5 Solder Dip 15.
4±0.
3 2.
8±0.
2 1.
5±0.
2 10.
5±0.
5 9.
5±0.
2 8.
0±0.
2 4.
5±0.
2 1.
4±0.
1 6.
7±0.
3 2.
8±0.
2 φ3.
7±0.
2 5.
08±0.
5 0.
8±0.
1 2.
54±0.
3 9.
5 2.
5±0.
2 0.
6±0.
1 123 1:Base 2:Collector 3:Emitter TO–220 Package(b) s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICBO IEBO VCEO VCER VEBO hFE VCE(sat) VBE(sat) fT ton tstg tf VCB = 1100V, IE = 0 VEB = 4V, IC = 0 IC = 1mA, IB = 0 IC = 1mA, RBE = 100Ω IE = 1mA, IC = 0 VCE = 5V, IC = 30mA IC = 60mA, IB = 6mA IC = 60mA, IB = 6mA VCE = 10V, IC = 30mA, f = 1MHz IC = 150mA, IB1 = 15mA, IB2 = –30mA, VCC = 250V min typ max Unit 10 µA 10 µA 700 V 1400 V 5V 10 40 2V 2V 12 MHz 2 µs 3 µs 1 µs 1 Collector power dissipation PC (W) Power Transistors 40 30 (1) 20 PC — Ta (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=1.
4W) (2) 10 (3) (4) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Base to emitter saturation voltage VBE(sat) (V) VBE(sat) — IC 100 IC/IB=10 30 10 3 ...


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