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BD948

INCHANGE
Part Number BD948
Manufacturer INCHANGE
Description Silicon PNP Power Transistor
Published Dec 13, 2014
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 85(Min)@ IC= -500mA ·Complement to Type BD943/945...
Datasheet PDF File BD948 PDF File

BD948
BD948

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 85(Min)@ IC= -500mA ·Complement to Type BD943/945/947 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD944 -22 VCBO Collector-Base Voltage BD946 -32 BD948 -45 VCEO Collector-Emitter Voltage BD944 -22 BD946 -32 BD948 -45 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -5 ICM Collector Current-Peak -8 IB Base Current-Continuous -1 PC Collector Power Dissipation @ TC=25℃ 40 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.
12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W BD944/946/948 isc website：www.
iscsemi.
com 1 isc & isc...


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