2SC2458
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS(TA=25 )
Parameter Symbol Limits Unit
Collector-Base Voltage
VCBO
V
Collector-Emitter Voltage VCEO
V
Emitter -Base Voltage
VEBO
V
Collector Current
Ic
mA
Collector Dissipation
Pc
mW
Junction Temperature
TJ
Storage Temperature
TSTG -55 ~ +150
ELECTRCAL CHARACTERISTICS(TA=25 )
Parameter
Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO IC= 0. 1mA,IE=0
V
Collector-Emitter Breakdown Voltage BVCEO IC= 1mA,IB=0
V
Emitter -Base Breakdown Voltage BVEBO IE= 0. 1mA,IC=0
V
Collector Cut-off Current
ICBO
VCB =50V,IE=0
nA
Emitter Cut-off Current
IEBO VEB = 5V,IC=0,
nA
Collector-Emitter Saturation Voltage VcE(sat) IC= 100mA,IB=10mA
V
DC Current Gain
hFE VCE= 6V,IC=2mA,
Transition ftequency
fT VCE = 10V,Ic= 1mA
MHZ
Output Capacitance
COB VCB= 10V,IE= 0,f=1MHZ
pF
hFE CLASSIFICAT...
C2458 PDF File
