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MXP4004BTS

MaxPower Semiconductor
Part Number MXP4004BTS
Manufacturer MaxPower Semiconductor
Description 40V N-Channel MOSFET
Published Dec 26, 2014
Detailed Description 40V N-Channel MOSFET Applications: ● Power Supply ● DC-DC Converters ● DC-AC Inverters Features: ● Lead Free ● Low RDS(O...
Datasheet PDF File MXP4004BTS PDF File

MXP4004BTS
MXP4004BTS


Overview
40V N-Channel MOSFET Applications: ● Power Supply ● DC-DC Converters ● DC-AC Inverters Features: ● Lead Free ● Low RDS(ON) to Minimize Conductive Loss ● Low Gate Charge for Fast Switching Application ● Optimized V(BR)DSS Ruggedness MXP4004BTS VDS 40V RDS(ON)(MAX) 3mΩ ID 170A Ordering Information Park Number Package MXP4004BTS TO220 Brand MXP TO220 Pin Definition and Inner Circuit Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-to-Source Voltage 40 ID Continuous Drain Current Silicon Limited Package Limited 170 80 IDM Pulsed Drain Current @VGS=10V 679 PD Power Dissipation 231 VGS Gate-to-Source Voltage +/-20 TJ and Tstg Operating Junction and Storage Temperature Range -55 to 175 Unit V A W V ℃ Avalanche Characteristics Symbol Parameter EAS① Single Pulse Avalanche Energy (VDS=20V, VGS=10V, Rg=25Ω, L=1mH) IAS Single Pulse Avalanche Current TC=25℃ unless otherwise specified Value 200 Figure 9 Unit mJ A Thermal Resistance Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Max Unit 0.
65 ℃/W 62 ℃/W ① : Guarantee number.
©MaxPower Semiconductor Inc.
Page1 MXP4004BTS Preliminary Dec.
2011 40V N-Channel MOSFET MXP4004BTS OFF Characteristics Symbol Parameter TJ=25℃ unless otherwise specified Min Typ Max Unit V(BR)DSS Drain-to-Source Breakdown Voltage 40 - -V IDSS Drain-to-Source Leakage Current - - 1 100 uA IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage - - 100 100 nA Test Conditions VGS=0V, ID=250uA VDS=32V, VGS=0V VDS=32V, VGS=0V, TJ=125 ℃ VGS=+20V VGS= -20V ON Characteristics Symbol Parameter TJ=25℃ unless otherwise specified Min Typ Max Unit RDS(ON) Static Drain-to-Source On-Resistance - 2.
3 3.
0 mΩ VGS(th) Gate Threshold Voltage 2 - 4V Test Conditions VGS=10V, ID=80A VGS=VDS, ID=250uA Dynamic Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crs...


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