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MXP4004BT

MaxPower Semiconductor
Part Number MXP4004BT
Manufacturer MaxPower Semiconductor
Description 40V N-Channel MOSFET
Published Dec 26, 2014
Detailed Description 40V N-Channel MOSFET MXP4004BT/BE Datasheet Applications: z Power Supply z DC-DC Converters Features: z LeadFree z Low...
Datasheet PDF File MXP4004BT PDF File

MXP4004BT
MXP4004BT

Overview
40V N-Channel MOSFET MXP4004BT/BE Datasheet Applications: z Power Supply z DC-DC Converters Features: z LeadFree z Low RDS(ON) to Minimize Conductive Loss z Low Gate Change for Fast Switching Application z Optimized BVDSS Capability VDSS 40 V RDS(ON) (Max) 4.
0 mΩ IDa 173 A Ordering Information Part Number Package Brand MXP4004BT TO220 MXP MXP4004BE TO263 Absolute Maximum Ratings Tc=25℃ unless otherwise specified Symbol MXP Parameter TO-263 Value Units VDS Drain-to-Source Voltage IDa Continuous Drain Current (TC=25℃) IDM Pulsed Drain Current @VG=10V EAS Single Pulse Avalanche Energy (L=1mH) 40 V 173 A 693 724 mJ IAS Pulsed Avalanche Energy Figure.
9 A TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃ a.
Calculated continuous current based upon maximum allowable junction temperature, +175℃.
Package limitation current is 80A.
OFF Characteristics TJ=25℃ unless otherwise specified Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward IGSS Leakage Gate-to-Source Reverse Leakage ©MaxPower Semiconductor Inc.
Min Typ Max Units Test Conditions 40 V VGS=0V, ID=250µA 1 µA VDS=32V, VGS=0V 100 VDS=32V, VGS=0V TJ=125 ℃ 100 VGS=+20V nA 100 VGS= -20V 1 MXP4004BT Rev 1.
0, Sep 2011 ON Characteristics TJ=25℃ unless otherwise specified Symbol Parameter Min Typ Max Units Test Conditions RDS(ON) Static Drain-to-Source On-Resistance 2.
5 4 mΩ VGS= 10V, ID=24A VGS(TH) Gate Threshold Voltage 2 4 V VDS=VGS, ID=250µA Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain (“Miller”) Charge td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Typ 5016 787 292 70 24 24 19 67 49 31 Max Units Test Conditions pF VGS=0V, VDS=20V, ...


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