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C2120

Toshiba Semiconductor
Part Number C2120
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Jan 6, 2015
Detailed Description 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit...
Datasheet PDF File C2120 PDF File

C2120
C2120

Overview
1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications.
• Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 800 160 600 150 −55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 35 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE (1) VCE = 1 V, IC = 100 mA (Note) hFE (2) VCE = 1 V, IC = 700 mA VCE (sat)...


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