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C2120

INCHANGE
Part Number C2120
Manufacturer INCHANGE
Description Silicon NPN Transistor
Published Jan 6, 2015
Detailed Description INCHANGE Semiconductor isc Silicon NPN Transistor isc Product Specification 2SC2120 DESCRIPTION ·High hFE(1)=100-320 ·...
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C2120
C2120

Overview
INCHANGE Semiconductor isc Silicon NPN Transistor isc Product Specification 2SC2120 DESCRIPTION ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 APPLICATIONS ·Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 35 V 30 V 5V 800 mA 160 mA 600 mW 150 ℃ -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Transistor isc Product Specification 2SC2120 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA ; IB= 20mA VBE(on) Base-Emitter On Voltage IC= 10mA ; VCE= 1V ICBO Emitter Cutoff Current VC...


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