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ME4856

Part Number	ME4856
Manufacturer	Matsuki
Description	N-Channel 30-V(D-S) MOSFET
Published	Feb 9, 2015
Detailed Description	N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect tra...
Datasheet	ME4856 PDF File

Overview

N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
ME4856 FEATURES ● RDS(ON)≦6mΩ@VGS=10V ● RDS(ON)≦8.
5mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance...

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