DatasheetsPDF.com

FX503

Sanyo Semicon Device
Part Number FX503
Manufacturer Sanyo Semicon Device
Description High-Current Switching Applications
Published Mar 23, 2005
Detailed Description Ordering number:EN4903 FX503 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features · Co...
Datasheet PDF File FX503 PDF File

FX503
FX503

Overview
Ordering number:EN4903 FX503 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features · Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting.
· The FX503 houses two chips, each being equivalent to the 2SB1202, in one package.
· Matched pair characteristics.
Package Dimensions unit:mm 2118 [FX503] 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view) Switching Time Test CIrcuit Electrical Connection 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on ceramic board (750mm2×0.
8mm) 1 unit Mounted on ceramic board (750mm2×0.
8mm) Conditions Ratings –60 –50 –6 –3 –6 –600 1.
5 2 150 –55 to +150 Unit V V V A A mA W W ˚C ˚C · Marking:503 Continued on next page.
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/42695MO (KOTO) BX-1458 No.
4903-1/4 FX503 Continued from preceding page.
Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 hFE(small/ large) fT Cob VCE(sat) VBE(sat) VCB=–40V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–100mA VCE=–2V, IC=–3A VCE=–2V, IC=–100mA VCE=–10V, IC=–100mA VCB=–10V, f=1MHz IC=–2A, IB=–100mA –60 –50 –6 70 450 35 140 35 0.
8 150 39 –350 –0.
94 –700 –1.
2 MHz pF mV V V V V ns ns ns Conditions Rating...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)