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FX506

Sanyo Semicon Device
Part Number FX506
Manufacturer Sanyo Semicon Device
Description High-Current Switching Applications
Published Mar 23, 2005
Detailed Description Ordering number:EN4880 FX506 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features · Co...
Datasheet PDF File FX506 PDF File

FX506
FX506

Overview
Ordering number:EN4880 FX506 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features · Composite type with 2PNP transistors contained in one package, facilitating high-density mounting.
· The FX506 houses two chips, each being equivalent to the 2SD1803, in one package.
· Matched pair characteristics.
Package Dimensions unit:mm 2118 [FX506] 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view) Switching Time Test CIrcuit Electrical Connection 1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on ceramic board (750mm2×0.
8mm) 1unit Mounted on ceramic board (750mm2×0.
8mm) Conditions Ratings 60 50 6 5 8 1 1.
5 2 150 –55 to +150 Unit V V V A A A W W ˚C ˚C · Marking:506 Continued on next page.
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/42695MO (KOTO) BX-1391 No.
4880-1/4 FX506 Continued from preceding page.
Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 hFE(small/ large) fT Cob VCE(sat) VBE(sat) VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=4A VCE=2V, IC=500mA VCE=5V, IC=500mA VCB=10V, f=1MHz IC=3A, IB=150mA 60 50 6 50 500 20 140 35 0.
8 180 40 220 0.
95 400 1.
3 MHz pF mV V V V V ns ns ns Conditions Ratings min typ max 1 1 400 Unit µA µA...


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