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FZT649

Part Number	FZT649
Manufacturer	Fairchild Semiconductor
Description	NPN Low Saturation Transistor
Published	Mar 23, 2005
Detailed Description	FZT649 Discrete Power & Signal Technologies July 1998 FZT649 C E B C SOT-223 NPN Low Saturation Transistor These d...
Datasheet	FZT649 PDF File

Overview

FZT649 Discrete Power & Signal Technologies July 1998 FZT649 C E B C SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted FZT649 25 35 5 3 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum ju...

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