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FZT651

Kexin
Part Number FZT651
Manufacturer Kexin
Description High Performance Transistors
Published Apr 14, 2016
Detailed Description SMD Type Transistors NPN Silicon Planar High Performance Transistors FZT651 0.1max +0.050.90 -0.05 +0.151.65 -0.15 F...
Datasheet PDF File FZT651 PDF File

FZT651
FZT651

Overview
SMD Type Transistors NPN Silicon Planar High Performance Transistors FZT651 0.
1max +0.
050.
90 -0.
05 +0.
151.
65 -0.
15 Features 60 Volt VCEO.
3 Amp continuous current.
Low saturation voltage.
SOT-223 6.
50+0.
2 -0.
2 3.
00+0.
1 -0.
1 4 Unit: mm 3.
50+0.
2 -0.
2 0.
90+0.
2 -0.
2 7.
00+0.
3 -0.
3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range 123 2.
9 4.
6 0.
70+0.
1 -0.
1 1 base 2 collector 3 emitter Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 80 60 5 3 6 2 -55 to +150 Unit V V V A A W www.
kexin.
com.
cn 1 SMD Type Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-Emitter Turn-On Voltage * Static Forward Current Transfer Ratio Transitional frequency Output capacitance Switching times * Pulse test: tp = 300 ìs; d 0.
02.
Marking Marking FZT651 FZT651 Transistors Symbol Testconditons V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO VCB=60V VCB=60V,Ta = 100 IEBO VEB=4V VCE(sat) IC=1A, IB=100mA IC=3A, IB=300mA VBE(sat) IC=1A, IB=100mA VBE(on) IC=1A, VCE=2V IC=50mA, VCE =2V* hFE IC=500mA, VCE =2V* IC=1A, VCE =2V* fT Cobo ton toff IC=2A, VCE =2V* IC=100mA, VCE=5V f=100MHz VCB=10V, f=1MHz IC=500mA,VCC=10V,IB1=IB2=50mA Min Typ Max Unit 80 V 60 V 5V 0.
1 10 ìA 0.
1 ìA 0.
12 0.
3 0.
43 0.
6 V 0.
9 1.
25 V 0.
8 1 V 70 200 100 200 300 80 170 40 80 140 175 MHz 30 pF 45 ns 800 ns 2 www.
kexin.
com.
cn ...


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