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AON7700

Alpha & Omega Semiconductors
Part Number AON7700
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Mar 9, 2015
Detailed Description AON7700 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON7700 uses advanced trench techno...
Datasheet PDF File AON7700 PDF File

AON7700
AON7700

Overview
AON7700 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON7700 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) 30V 40A < 7.
2mΩ < 8.
6mΩ 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View Bottom View Pin 1 Top View 18 27 36 45 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
1mH C IDSM IAS EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 40 28 100 16 12 17 14 26 10 3.
1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 30 60 4 Max 40 75 4.
8 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 3: May.
2012 www.
aosmd.
com Page 1 of 7 AON7700 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=10mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS=±12V VDS=VGS，ID=250µA VGS=10V, VDS=5V VGS=10V, ID=12A VGS=4.
5V, ID=10A Forward Transconductance VDS=5V, ID=12A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C TJ=125...


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