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AON7702A

Alpha & Omega Semiconductors
Part Number AON7702A
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Mar 9, 2015
Detailed Description AON7702A 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON7702A uses advanced trench tech...
Datasheet PDF File AON7702A PDF File

AON7702A
AON7702A

Overview
AON7702A 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON7702A uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 30V 36A < 10mΩ < 13mΩ 100% UIS Tested 100% Rg Tested Top View DFN 3x3A Bottom View Pin 1 Top View 18 27 36 45 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 36 22 80 13.
5 11 15 11 23 9 3.
1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 30 60 4.
5 Max 40 75 5.
4 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1: Feb.
2011 www.
aosmd.
com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=125°C 0.
5 100 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.
2 1.
65 2.
1 ID(ON) On state drain current VGS=10V, VDS=5V 80 VGS=10V, ID=13A 8.
2 10 RDS(ON) Static Drain-Source On-Resistance TJ=125°C 12.
5 15 VGS=4.
5V, ID=11A 9.
9 13 gFS Forward Transconductance VDS=5V, ID=13A 80 ...


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