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MJE13005G

ON Semiconductor
Part Number MJE13005G
Manufacturer ON Semiconductor
Description NPN Silicon Power Transistors
Published Apr 25, 2015
Detailed Description MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed powe...
Datasheet PDF File MJE13005G PDF File

MJE13005G
MJE13005G

Overview
MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
Features • VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 2 to 4 A, 25 and 100_C tc @ 3A, 100_C is 180 ns (Typ) • 700 V Blocking Capability • SOA and Switching Applications Information • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak (Note 1) Base Current − Continuous − Peak (Note 1) Emitter Current − Continuous − Peak (Note 1) Total Device Dissipation @ TA = 25_C Derate above 25°C Symbol VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM PD Value 400 700 9 4 8 2 4 6 12 2 0.
016 Unit Vdc Vdc Vdc Adc Adc Adc W W/_C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 75 0.
6 −65 to +150 W W/_C _C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 62.
5 _C/W Thermal Resistance, Junction−to−Case RqJC 1.
67 _C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 275 _C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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