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Si9926

Part Number	Si9926
Manufacturer	Nanxin
Description	Dual N-Channel MOSFET
Published	May 11, 2015
Detailed Description	Features ·Low On resistance. ·1.8V drive. ·RoHS compliant. Si9926 Dual N-Channel Enhancement MOSFET Si9926 Package Dime...
Datasheet	Si9926 PDF File

Overview

Features ·Low On resistance.
·1.
8V drive.
·RoHS compliant.
Si9926 Dual N-Channel Enhancement MOSFET Si9926 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.
8mm) 1unit Mounted on a ceramic board (1000mm2×0.
8mm) Ratings 20 +12 7.
6 30 1.
3 1.
7 150 -55~+150 Unit V V A A W W 0C 0C Electrical Characteristics at Ta=250C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(th) RDS(ON) RDS(ON) RDS(ON) Ciss Coss Crss Conditions ID=250uA, VGS=0V ...

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