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2SK3628

Panasonic
Part Number 2SK3628
Manufacturer Panasonic
Description Silicon N-channel power MOSFET
Published May 13, 2015
Detailed Description Power MOSFETs 2SK3628 Silicon N-channel power MOSFET For hihg-speed switching 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3....
Datasheet PDF File 2SK3628 PDF File

2SK3628
2SK3628

Overview
Power MOSFETs 2SK3628 Silicon N-channel power MOSFET For hihg-speed switching 15.
0±0.
3 11.
0±0.
2 Unit: mm 5.
0±0.
2 (3.
2) (0.
7) ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * VDSS VGSS ID IDP EAS 230 ±30 20 80 570 V V A A mJ Power dissipation Ta = 25°C Channel temperature Storage temperature PD 100 3 Tch 150 Tstg −55 to +150 W °C °C Note) *: L = 2.
23 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C 16.
2±0.
5 (3.
2) (2.
3) Solder Dip 21.
0±0.
5 15.
0±0.
2 φ 3.
2±0.
1 2.
0±0.
2 1.
1±0.
1 2.
0±0.
1 0.
6±0.
2 5.
45±0.
3 10.
9±0.
5 123 1: Gate 2: Drain 3: Source TOP-3F-B1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Gate-drain surrender voltage Diode forward voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) VDSS VDSF Vth IDSS IGSS RDS(on) Yfs Ciss ID = 1 mA, VGS = 0 IDR = 20 A, VGS = 0 VDS = 25 V, ID = 1 mA VDS = 184 V, VGS = 0 VGS = ±30 V, VDS = 0 VGS = 10 V, ID = 10 A VDS = 25 V, ID = 10 A VDS = 25 V, VGS = 0, f = 1 MHz 230 −1.
5 1.
7 3.
7 100 ±1 65 85 7 14 2 300 V V V µA µA mΩ S pF Short-circuit output capacitance (Common-source) Coss 330 pF Reverse transfer capacitance (Common-source) Crss 30 pF Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf VDD ≈ 100 V, ID = 15 A RL = 6.
7 Ω, VGS = 10 V 35 ns 26 ns 220 ns 36 ns Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2004 SJG00041AED 1 Drain current ID (A) Power dissipation PD (W) 2SK3628 Safe operation area 103 N...


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