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2SK3652

Panasonic
Part Number 2SK3652
Manufacturer Panasonic
Description N-channel enhancement mode MOSFET
Published May 13, 2015
Detailed Description This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET ...
Datasheet PDF File 2SK3652 PDF File

2SK3652
2SK3652

Overview
This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET 3.
3±0.
3Product lifecyclennuaen ■ Features • Low on-resistance, low Qg • High avalanche resistance ■ Applications • For PDP • For high-speed switching ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * VDSS VGSS ID IDP EAS 230 ±30 50 200 2 200 V V A A mJ Power dissipation Junction temperature Storage temperature Ta = 25°C PD Tj Tstg 100 3 150 −55 to +150 W °C °C Note) *: L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C 18.
6±0.
5stage.
dc (2.
0) Solder Dip 26.
5±0.
5e/ (2.
0) (1.
2) (10.
0) (4.
5) (23.
4) 22.
0±0.
5 15.
5±0.
5 φ 3.
2±0.
1 Unit: mm 3.
0±0.
3 5˚ 5˚ (4.
0) 2.
0±0.
2 5˚ 5˚ 5˚ 1.
1±0.
1 0.
7±0.
1 5.
45±0.
3 10.
9±0.
5 5.
5±0.
3 5˚ 12 3 (2.
0) 1: Gate 2: Drain 3: Source TOP-3E-A1 Package Marking Symbol: K3652 Internal C...


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