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D2110

Part Number	D2110
Manufacturer	Inchange Semiconductor
Description	2SD2110
Published	May 16, 2015
Detailed Description	INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD211...
Datasheet	D2110 PDF File

Overview

INCHANGE Semiconductor www.
DataSheet4U.
com isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max) @IC= 2A ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.
cnSYMBOL PARAMETER VALUE UNIT .
iscsemVCBO Collector-Base Voltage 80 V wwwVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 4A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power D...

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