DatasheetsPDF.com

IPB80N06S2L-07

Infineon Technologies
Part Number IPB80N06S2L-07
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up ...
Datasheet PDF File IPB80N06S2L-07 PDF File

IPB80N06S2L-07
IPB80N06S2L-07

Overview
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2L-07 IPP80N06S2L-07 Product Summary V DS R DS(on),max (SMD version) ID 55 V 6.
7 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2L-07 IPP80N06S2L-07 Package Ordering Code Marking PG-TO263-3-2 SP0002-18867 2N06L07 PG-TO220-3-1 SP0002-18831 2N06L07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) I D,pulse T C=25 °C E AS I D= 80 A V GS P tot T C=25 °C T j, T stg Value 80 80 320 450 ±20 210 -55 .
.
.
+175 Unit A mJ V W °C Rev.
1.
0 page 1 http://store.
iiic.
cc/ 2005-12-27 Parameter S...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)