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IPB80N06S2L-11

Infineon Technologies
Part Number IPB80N06S2L-11
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 11, 2015
Detailed Description OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 ...
Datasheet PDF File IPB80N06S2L-11 PDF File

IPB80N06S2L-11
IPB80N06S2L-11

Overview
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 Product Summary V DS R DS(on),max (SMD version) ID 55 V 10.
7 mW 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N06S2L-11 IPP80N06S2L-11 IPI80N06S2L-11 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code Marking SP0002-18177 2N06L11 SP0002-18175 2N06L11 SP0002-18176 2N06L11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) I D,pulse E AS V GS T C=25 °C I D=80A Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Value 80 58 320 280 ±20 158 -55 .
.
.
+175 Unit A mJ V W °C Rev.
1.
1 page 1 2010-10-26 IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - 0.
95 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area5) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=93 µA 1.
2 1.
6 2.
0 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.
01 1 µA V DS=55 V, V GS=0 V, T j=125 °C2) - 1 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.
5 V, I D=40 A - 10.
7 14.
7 mW V GS=4.
5 V, I D=40 A, - 10.
4 14.
4 SMD version Drain-source on-state resistance RD...


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