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NCE4403

NCE Power Semiconductor
Part Number NCE4403
Manufacturer NCE Power Semiconductor
Description NCE P-Channel Enhancement Mode Power MOSFET
Published May 22, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE4403 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4403 us...
Datasheet PDF File NCE4403 PDF File

NCE4403
NCE4403

Overview
http://www.
ncepower.
com Pb Free Product NCE4403 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4403 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =-30V,ID =-6.
1A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 61mΩ @ VGS=-4.
5V RDS(ON) <117mΩ @ VGS=-2.
5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Fast switching speed Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 4403 NCE4403 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit -30 ±12 -6.
1 -4.
3 30 2.
5 -55 To 150 Unit V V A A A W ℃ Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Thermal Characteristic Thermal Resistance,Junction-to-Ambient(Note 2) Pb Free Product NCE4403 RθJA 50 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-5A VGS=-4.
5V, ID=-4.
5A VDS=-2.
5V,ID=-3A Forward Transconductance gFS VDS=-15V,ID=-5A Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer ...


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