DatasheetsPDF.com

NCE4435

NCE Power Semiconductor
Part Number NCE4435
Manufacturer NCE Power Semiconductor
Description NCE P-Channel Enhancement Mode Power MOSFET
Published May 22, 2015
Detailed Description Pb Free Product NCE4435 NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE4435 uses advanced trench techn...
Datasheet PDF File NCE4435 PDF File

NCE4435
NCE4435

Overview
Pb Free Product NCE4435 NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
5V.
GENERAL FEATURES ● VDS = -30V,ID = -9.
1A RDS(ON) < 35mΩ @ VGS=-4.
5V RDS(ON) < 20mΩ @ VGS=-10V D G S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery Switch ●Load switch ●Power management SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package 4435 NCE4435 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal C...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)