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IPD90N04S4-03

Infineon
Part Number IPD90N04S4-03
Manufacturer Infineon
Description Power-Transistor
Published May 23, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 17...
Datasheet PDF File IPD90N04S4-03 PDF File

IPD90N04S4-03
IPD90N04S4-03

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD90N04S4-03 Product Summary V DS R DS(on),max ID 40 V 3.
2 mΩ 90 A PG-TO252-3-313 Type IPD90N04S4-03 Package Marking PG-TO252-3-313 4N0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=45A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 90 360 185 90 ±20 94 -55 .
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+175 55/175/56 Unit A mJ A V W °C Rev.
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0 page 1 2010-04-13 IPD90N04S4-03 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, ...


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