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IPD90N04S4-05

Infineon
Part Number IPD90N04S4-05
Manufacturer Infineon
Description Power-Transistor
Published May 23, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 17...
Datasheet PDF File IPD90N04S4-05 PDF File

IPD90N04S4-05
IPD90N04S4-05

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD90N04S4-05 Product Summary V DS R DS(on),max ID 40 V 5.
2 mΩ 86 A PG-TO252-3-313 Type IPD90N04S4-05 Package Marking PG-TO252-3-313 4N0405 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=45A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 86 61 344 77 90 ±20 65 -55 .
.
.
+175 55/175/56 Unit A mJ A V W °C Rev.
1.
0 page 1 2010-04-13 IPD90N04S4-05 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA - - minimal footprint 6 cm2 cooling area3) min.
Values typ.
Unit max.
- - 2.
3 K/W - - 62 - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=30µA I DSS V DS=40V, V GS=0V, T j=25°C V DS=18V, V GS=0V, T j=85°C2) I GSS V GS=20V, V DS=0V R DS(on) V GS=10V, I D=86A 40 - -V 2.
0 3.
0 4.
0 - 0.
02 1 µA - 1 20 - - 100 nA - 4.
3 5.
2 mΩ Rev.
1.
0 page 2 2010-04-13 IPD90N04S4-05 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge ...


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