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K1365

Part Number	K1365
Manufacturer	Toshiba Semiconductor
Description	2SK1365
Published	May 29, 2015
Detailed Description	2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1365 Switching Power Supply Applicati...
Datasheet	K1365 PDF File

Overview

2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.
5) 2SK1365 Switching Power Supply Applications z Low drain−source ON resistance : RDS (ON) = 1.
5 Ω (typ.
) z High forward transfer admittance : |Yfs| = 4.
0 S (typ.
) z Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) z Enhancement mode : Vth = 1.
5 to 3.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD Tch Tstg 1000 1000 ...

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