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BSL306N

Infineon Technologies
Part Number BSL306N
Manufacturer Infineon Technologies
Description Small-Signal-Transistor
Published May 30, 2015
Detailed Description OptiMOS™2 Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche ra...
Datasheet PDF File BSL306N PDF File

BSL306N
BSL306N

Overview
OptiMOS™2 Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level (4.
5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen free according to IEC61249-2-21 BSL306N Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.
5 V 30 V 57 mW 93 2.
3 A PG-TSOP-6 6 54 1 23 Type Package Tape and Reel Information BSL306N TSOP-6 H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified 1) Marking sPN Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Avalanche energy, single pulse E AS I D=2.
3 A, R GS=25 W Reverse diode dv /dt Gate source voltage Power dissipation1) Operating and storage temperature dv /dt I D=2.
3 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C V GS P tot T A=25 °C T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 1) Remark: one of both transistors act...


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