DatasheetsPDF.com

BSP372N

Infineon Technologies
Part Number BSP372N
Manufacturer Infineon Technologies
Description Small-Signal-Transistor
Published May 30, 2015
Detailed Description OptiMOS™ Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic Level (4.5V rated) • Avalanche rated • ...
Datasheet PDF File BSP372N PDF File

BSP372N
BSP372N

Overview
OptiMOS™ Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic Level (4.
5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSP372N Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.
5 V 100 V 0.
23 W 0.
27 1.
8 A PG-SOT223 Type BSP372N Package SOT223 Tape and Reel H6327: 1000 pcs/ reel Marking BSP372N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Halogen-Free Yes Value 1.
8 1.
5 7.
2 Packing Non dry Unit A Avalanche energy, single pulse E AS I D=1.
8 A, R GS=25 W 33 mJ Reverse diode dv /dt dv /dt I D=1.
8 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation1) Operating and storage temperature ESD Class V GS P tot T A=25 °C T j, T stg JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 6 ±20 1.
8 -55 .
.
.
150 0 (<250V) 260 °C 55/150/56 kV/µs V W °C Rev 2.
0 page 1 2013-04-03 Parameter Thermal characteristics Thermal resistance junction - soldering point Thermal resistance junction - ambient Symbol Conditions BSP372N min.
Values typ.
Unit max.
R thJS R thJA minimal footprint 6 cm2 cooling area1) - - 25 K/W - 110 - 70 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Gate-source on-state resistance Transconductance V (BR)DSS V GS=0 V, I D=250 µA 100 V GS(th) V DS=Vgs V, I D=218 µA 0.
8 I DSS V DS=100 V, V GS=0 V, T j=25 °C - V DS=100 V, V GS=0 V, T j=150 °C I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=1.
8 A V GS=4.
5 V, I D=1.
7 A g fs |V DS|>2|I D|R DS(on)max, I D=1.
5 A - - - -V 1.
4 1.
80 - 0.
1 mA - 10 - 10 nA 153 230 mW 172 270 5.
1 - S 1) Device on 40mm x 40mm x 1.
5mm epoxy PCB FR4 with 6...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)