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BSP373

Infineon Technologies AG
Part Number BSP373
Manufacturer Infineon Technologies AG
Description SIPMOS Small-Signal Transistor
Published Mar 23, 2005
Detailed Description BSP 373 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V Pin...
Datasheet PDF File BSP373 PDF File

BSP373
BSP373

Overview
BSP 373 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.
1 .
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4.
0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 100 V ID 1.
7 A RDS(on) 0.
3 Ω Package Marking BSP 373 Type BSP 373 SOT-223 BSP 373 Ordering Code Q67000-S301 Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 28 ˚C ID A 1.
7 DC drain current, pulsed TA = 25 ˚C IDpuls 6.
8 EAS Avalanche energy, single pulse ID = 1.
7 A, VDD = 25 V, RGS = 25 Ω L = 23.
3 mH, Tj = 25 ˚C mJ 45 VGS Ptot Gate source voltage Power dissipation TA = 25 ˚C ± 20 1.
8 V W Data Sheet 1 05.
99 BSP 373 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Tj Tstg RthJA R thJS -55 .
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+ 150 -55 .
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+ 150 ˚C ≤ 70 ≤ 10 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min.
Static Characteristics Values typ.
max.
Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.
25 mA, Tj = 0 ˚C V (BR)DSS V 100 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 2.
1 IDSS 3 4 µA Zero gate voltage drain current VDS = 100 V, V GS = 0 V, Tj = 25 ˚C VDS = 100 V, V GS = 0 V, Tj = 125 ˚C IGSS 0.
1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance VGS = 10 V, ID = 1.
7 A Ω 0.
16 0.
3 Data Sheet 2 05.
99 BSP 373 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Values typ.
max.
Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 1.
7 A gfs S 1.
5 2.
8 pF 400 550 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS ...


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