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BSS119N

Infineon Technologies
Part Number BSS119N
Manufacturer Infineon Technologies
Description Small-Signal-Transistor
Published May 30, 2015
Detailed Description OptiMOS™ Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • ...
Datasheet PDF File BSS119N PDF File

BSS119N
BSS119N

Overview
OptiMOS™ Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.
5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant; Halogen free BSS119N Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.
5 V 100 V 6W 10 0.
19 A PG-SOT23 3 1 2 Type BSS119N Package SOT23 Tape and Reel Information H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking sSH Halogen free Packing Yes Non dry Value 0.
19 0.
15 0.
77 Unit A Avalanche energy, single pulse E AS I D=0.
19 A, R GS=25 W 2.
0 mJ Reverse diode dv /dt dv /dt I D=0.
19 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation1) Operating and storage temperature ESD Class V GS P tot T A=25 °C T j, T stg JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 6 ±20 0.
5 -55 .
.
.
150 0 (<250V) 260 °C 55/150/56 kV/µs V W °C Rev 2.
1 page 1 2012-05-10 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions BSS119N min.
Values typ.
Unit max.
R thJA minimal footprint 1) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=Vgs V, I D=13 µA I DSS V DS=100 V, V GS=0 V, T j=25 °C 100 1.
3 - V DS=100 V, V GS=0 V, T j=150 °C I GSS V GS=20 V, V DS=0 V R DS(on) V GS=4.
5 V, I D=0.
15 A V GS=10 V, I D=0.
19 A g fs |V DS|>2|I D|R DS(on)max, I D=0.
15 A - - - -V 1.
9 2.
3 - 0.
01 mA -5 2915 2406 10 nA 10000 mW 6000 0.
35 - S 1) Performed on 40mm² FR4 PCB.
The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB Rev 2.
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