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BSS119

Siemens Semiconductor Group
Part Number BSS119
Manufacturer Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor
Published Mar 23, 2005
Detailed Description BSS 119 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.6 ...2.6 V Pin 1 G Pin 2 S Pin...
Datasheet PDF File BSS119 PDF File

BSS119
BSS119

Overview
BSS 119 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.
6 .
.
.
2.
6 V Pin 1 G Pin 2 S Pin 3 D Type BSS 119 Type BSS 119 VDS 100 V ID 0.
17 A RDS(on) 6Ω Package SOT-23 Marking sSH Ordering Code Q67000-S007 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 100 100 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 14 ± 20 A 0.
17 TA = 28 °C DC drain current, pulsed IDpuls 0.
68 TA = 25 °C Power dissipation Ptot 0.
36 W TA = 25 °C Semiconductor Group 1 Sep-13-1996 BSS 119 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium 15 mm x 16.
7 mm x 0.
7 mm Symbol Values -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 350 ≤ 285 E 55 / 150 / 56 Unit °C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit V(BR)DSS 100 2 2.
6 V VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.
6 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 0.
1 2 10 4 6 1 60 µA VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS 100 nA Ω 6 10 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 0.
17 A VGS = 4.
5 V, ID = 0.
17 A Semiconductor Group 2 Sep-13-1996 BSS 119 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit gfs 0.
1 0.
2 70 10 4 - S pF 95 15 6 ns 4 6 VDS≥ 2 * ID * RDS(on)max, ID = 0.
17 A Input capacitance Ciss Coss - VGS =...


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