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IPG20N10S4L-22

Infineon Technologies
Part Number IPG20N10S4L-22
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 30, 2015
Detailed Description OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to ...
Datasheet PDF File IPG20N10S4L-22 PDF File

IPG20N10S4L-22
IPG20N10S4L-22

Overview
OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPG20N10S4L-22 Product Summary VDS RDS(on),max4) ID 100 V 22 mΩ 20 A PG-TDSON-8-4 Type IPG20N10S4L-22 Package Marking PG-TDSON-8-4 4N10L22 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) one channel active I D,pulse - Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage E AS I AS V GS I D=10A - Power dissipation one channel active P tot T C=25°C Operating and storage temperature T j, T stg - Value 20 20 80 130 15 ±16 60 -55 .
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+175 Unit A mJ A V W °C Rev.
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1 page 1 2013-01-30 IPG20N10S4L-22 Parameter Symbol Conditions Thermal characteristics2) ...


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