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AM2342

AiT Semiconductor
Part Number AM2342
Manufacturer AiT Semiconductor
Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Published Jun 6, 2015
Detailed Description AiT Semiconductor Inc. www.ait-ic.com   AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2342...
Datasheet PDF File AM2342 PDF File

AM2342
AM2342

Overview
AiT Semiconductor Inc.
www.
ait-ic.
com   AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2342 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.
Advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
 20V/5.
0A, RDS(ON) =25mΩ(typ.
)@VGS =4.
5V  20V/4.
5A, RDS(ON) =34mΩ(typ.
)@VGS =2.
5V  20V/4.
0A, RDS(ON) =48mΩ(typ.
)@VGS =1.
8V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOT-23 Package APPLICATION AM2342 is available in SOT-23 packages.
ORDER INFORMATION Package Type Part Number SOT-23 AM2342E3R E3 AM2342E3VR Note V: Green Package R : Tape & Reel AiT provides all Pb free products Suffix “ V “ means Green Package  Power Management in Note book  Portable Equipment  DSC  LCD Display inverter  Battery Powered System  DC/DC Converter N CHANNEL MOSFET REV1.
0   - JUL 2010 RELEASED - -1- AiT Semiconductor Inc.
www.
ait-ic.
com   PIN DESCRIPTION AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE Pin # 1 2 3 Symbol G S D Top View   Function Gate Source Drain REV1.
0   - JUL 2010 RELEASED - -2- AiT Semiconductor Inc.
www.
ait-ic.
com   AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE ABSOLUTE MAXIMUM RATINGS TA = 25℃ Unless otherwise specifiedd VDSS, Drain-Source Voltage 20V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current (TJ=150°C) VGS=4.
5V 5.
0A IDM, Pulsed Drain Current 20A IS, Continuous Source Current (Diode Conduction) 1.
0A PD, Power Dissipation TA=25°C 1.
25W TA=70°C 0.
8W TJ, Operation Junction Temperature 150℃ TSTG, Storage Temperature Range -55/150°C Stresses above may cause permanent damage to the device.
These are stre...


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