DatasheetsPDF.com

AM3400

AiT Semiconductor
Part Number AM3400
Manufacturer AiT Semiconductor
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Published Jun 6, 2015
Detailed Description AiT Semiconductor Inc. www.ait-ic.com   AM3400 MOSFET 30V N-CHANNEL ENHANCEMENT MODE   DESCRIPTION The AM3400 is the N...
Datasheet PDF File AM3400 PDF File

AM3400
AM3400

Overview
AiT Semiconductor Inc.
www.
ait-ic.
com   AM3400 MOSFET 30V N-CHANNEL ENHANCEMENT MODE   DESCRIPTION The AM3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.
Advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES  30V/5.
8A, RDS(ON) =28mΩ(typ.
)@VGS =10V  30V/5.
0A, RDS(ON) =30mΩ(typ.
)@VGS =4.
5V  30V/3.
5A, RDS(ON) =40mΩ(typ.
)@VGS =2.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOT-23 package The AM3400 is available in SOT-23 package.
ORDERING INFORMAITON Package Type Part Number SOT-23 AM3400E3R E3 AM3400E3VR Note V: Green Package R : Tape & Reel AiT provides all Pb free products Suffix “ V “ means Green Package APPLICATIONS  Power Management in Note book  Portable Equipment  DSC  LCD Display inverter  Battery Powered System  DC/DC Converter N CHANNEL MOSFET REV1.
0   -JUL 2010 RELEASED - -1- AiT Semiconductor Inc.
www.
ait-ic.
com     PIN DESCRIPTION AM3400 MOSFET 30V N-CHANNEL ENHANCEMENT MODE Pin # 1 2 3 Top View   Symbol G S D Gate Source Drain Function REV1.
0   -JUL 2010 RELEASED - -2- AiT Semiconductor Inc.
www.
ait-ic.
com     ABSOLUTE MAXIMUM RATINGS AM3400 MOSFET 30V N-CHANNEL ENHANCEMENT MODE TA = 25℃ Unless otherwise specified VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current (TJ=150°C) VGS=10V 5.
8A IDM, Pulsed Drain Current 25A IS, Continuous Source Current (Diode Conduction) 1.
7A PD, Power Dissipation TA=25°C 1.
25W TA=70°C 0.
8W TJ, Operation Junction Temperature 150°C TSTG, Storage Temperature Range -55/150°C Stresses above may cause permanent damage to the device.
These a...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)