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AM3401

AiT Semiconductor
Part Number AM3401
Manufacturer AiT Semiconductor
Description -30V P-CHANNEL ENHANCEMENT MODE MOSFET
Published Jun 6, 2015
Detailed Description AiT Semiconductor Inc. www.ait-ic.com AM3401 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3401 ...
Datasheet PDF File AM3401 PDF File

AM3401
AM3401


Overview
AiT Semiconductor Inc.
www.
ait-ic.
com AM3401 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM3401 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.
Advanced trench technology to provide excellent RDS(ON) low gate charge and     -30V/-4.
3A, RDS(ON) =47mΩ(typ.
)@VGS =-10V -30V/-3.
5A, RDS(ON) =55mΩ(typ.
)@VGS =-4.
5V -30V/-2.
5A, RDS(ON) =70mΩ(typ.
)@VGS =-2.
5V Super high density cell design for extremely low operation gate as 2.
5V.
RDS(ON)  Exceptional on-resistance and Maximum DC This device is suitable for use as a load switch or other general applications.
current capability  Available in SOT-23 and SOT-23S Packages The AM3401 is available in SOT-23 and SOT-23S Packages ORDERING INFORMATION Package Type Part Number SOT-23 AM3401E3R E3 AM3401E3VR SOT-23S AM3401E3SR E3S AM3401E3SVR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package APPLICATIONS  High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA  DC/DC Converter  Load Switch P CHANNEL MOSFET REV1.
3 - JUN 2010 RELEASED, JUL 2013 UPDATED - -1- AiT Semiconductor Inc.
www.
ait-ic.
com PIN DESCRIPTION AM3401 MOSFET -30V P-CHANNEL ENHANCEMENT MODE Top View Pin # SOT-23 SOT-23S 11 22 33 Symbol G S D Gate Source Drain Top View Function REV1.
3 - JUN 2010 RELEASED, JUL 2013 UPDATED - -2- AiT Semiconductor Inc.
www.
ait-ic.
com AM3401 MOSFET -30V P-CHANNEL ENHANCEMENT MODE ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage -30V VGSS, Gate-Source Voltage ±12V ID, Continuous Drain Current , VGS = -10VNOTE1 TC=25℃ TC=70℃ -4.
3A -3.
6A IDM, Pulsed Drain Current NOTE2 -20A PD, Power Dissipation TA=25oC TA=70oC 1.
5W 0.
9W TJ, Operation Junction Temperature -55℃~150℃ TSTG, Storage Temperature Range -55℃~150℃ Stresses above may cause permanent damage to the device.
These are stress ra...


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