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AM3406

AiT Semiconductor
Part Number AM3406
Manufacturer AiT Semiconductor
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Published Jun 6, 2015
Detailed Description AiT Semiconductor Inc. www.ait-ic.com AM3406 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3406 i...
Datasheet PDF File AM3406 PDF File

AM3406
AM3406

Overview
AiT Semiconductor Inc.
www.
ait-ic.
com AM3406 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3406 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.
Advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
 30V/6.
0A, RDS(ON) = 20mΩ(typ.
) @VGS = 10V  30V/4.
8A, RDS(ON) = 27mΩ(typ.
) @VGS = 4.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  This is a Full Green compliance  Available in SOT-23 Package APPLICATIONS The AM3406 is available in SOT-23 Package.
ORDERING INFORMATION Package Type Part Number SOT-23 AM3406E3R E3 AM3406E3VR Note R : Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package  Power Management in Note book  Portable Equipment  DSC  LCD Display inverter  Battery Powered System  DC/DC Converter P CHANNEL MOSFET N-Channel REV1.
0 - MAR 2011 RELEASED - -1- AiT Semiconductor Inc.
www.
ait-ic.
com PIN DESCRIPTION AM3406 30V N-CHANNEL ENHANCEMENT MODE MOSFET Pin # 1 2 3 Top View Symbol G S D Function Gate Source Drain REV1.
0 - MAR 2011 RELEASED - -2- AiT Semiconductor Inc.
www.
ait-ic.
com AM3406 30V N-CHANNEL ENHANCEMENT MODE MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current (TJ=150℃) VGS = 10V 6.
0A IDM, Pulsed Drain Current 10A IS, Continuous Source Current (Diode Conduction) 5.
0A PD, Power Dissipation TA = 25oC 1.
25W TA = 70oC 0.
8W TJ, Operation Junction Temperature 150℃ TSTG, Storage Temperature Range -55℃ ~ 150℃ Stress beyond above listed “Absolute Maximum Ratings” may lead perm...


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