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HFW640

SemiHow
Part Number HFW640
Manufacturer SemiHow
Description 200V N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFW640 / HFI640 Mar 2008 HFW640 / HFI640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145Ω ID = 18 A FEATURES...
Datasheet PDF File HFW640 PDF File

HFW640
HFW640

Overview
HFW640 / HFI640 Mar 2008 HFW640 / HFI640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.
145Ω ID = 18 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 37 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
145 Ω (Typ.
) @VGS=10V  100% Avalanche Tested D2-PAK I2-PAK 2 1 3 HFW640 1 2 3 HFI640 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC ...


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