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HFP8N60S

SemiHow
Part Number HFP8N60S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFP8N60S Dec 2006 HFP8N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 7.5 A FEATURES ‰ Originativ...
Datasheet PDF File HFP8N60S PDF File

HFP8N60S
HFP8N60S

Overview
HFP8N60S Dec 2006 HFP8N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 7.
5 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 7.
5 4.
6 30 ρ30 230 7.
5 14.
7 4.
5 PD TJ, TSTG TL Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 147 1.
18 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/ఁ ఁ ఁ Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Junction-to-Case Parameter Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -- Max.
0.
85 -62.
5 Units ఁ͠Έ క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͧ͡͡ HFP8N60S Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 3.
75 A 2.
5 -- Off Characteristics BVDSS ԩBVDSS /ԩTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 Ꮃ ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125ఁ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ---...


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