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HFP8N65S

SemiHow
Part Number HFP8N65S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFP8N65S Sep 2009 HFP8N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 7.2 A FEATURES ‰ Originativ...
Datasheet PDF File HFP8N65S PDF File

HFP8N65S
HFP8N65S

Overview
HFP8N65S Sep 2009 HFP8N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 7.
2 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 7.
2 4.
3 28.
8 ρ30 210 7.
2 14.
7 4.
5 PD TJ, TSTG TL Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ Operating and Stora...


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