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HFS10N60S

SemiHow
Part Number HFS10N60S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFS10N60S Nov 2007 HFS10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A FEATURES ˜ Originat...
Datasheet PDF File HFS10N60S PDF File

HFS10N60S
HFS10N60S

Overview
HFS10N60S Nov 2007 HFS10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.
67 ȍ ID = 9.
5 A FEATURES ˜ Originative New Design ˜ Superior Avalanche Rugged Technology ˜ Robust Gate Oxide Technology ˜ Very Low Intrinsic Capacitances ˜ Excellent Switching Characteristics ˜ Unrivalled Gate Charge : 29 nC (Typ.
) ˜ Extended Safe Operating Area ˜ Lower RDS(ON) : 0.
67 ȍ (Typ.
) @VGS=10V ˜ 100% Avalanche Tested TO-220F 123 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 9.
5* 5.
7* 38* ρ30 700 9.
5 15.
6 4.
5 PD TJ, TSTG TL Power Dissipation (TC = 25ଇ) - Derate above 25ଇ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 50 0.
4 -55 to +150 300 *Drain current limited by maximum junction temperature Units 9 $ $ $ 9 P$ P- 9QV : :ഒ ഒ ഒ Thermal Resistance Characteristics Symbol RșJC RșJA Junction-to-Case Parameter Junction-to-Ambient Typ.
--- Max.
2.
5 62.
5 Units ഒ: క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡ HFS10N60S Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ᒺ VGS = 10 V, ID = 4.
75 A 2.
0 -- Off Characteristics BVDSS ԩBVDSS /ԩTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 ᒺ ID = 250 ᒺ, Referenced to 25୅ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125ఁ VGS = 30 V, VDS = 0 V...


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