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HFS10N60S


Part Number HFS10N60S
Manufacturer SemiHow
Title N-Channel MOSFET
Description HFS10N60S Nov 2007 HFS10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A FEATURES ˜ Originative New Design ˜ Superior ...
Features ˜ Originative New Design ˜ Superior Avalanche Rugged Technology ˜ Robust Gate Oxide Technology ˜ Very Low Intrinsic Capacitances ˜ Excellent Switching Characteristics ˜ Unrivalled Gate Charge : 29 nC (Typ.) ˜ Extended Safe Operating Area ˜ Lower RDS(ON) : 0.67 ȍ (Typ.) @VGS=10V ˜ 100% Avalanche Test...

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HFS10N60U : HFS10N60U HFS10N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 29 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.67 ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested Oct 2013 BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (N.




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