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HFS10N65U

SemiHow
Part Number HFS10N65U
Manufacturer SemiHow
Description N-Channel MOSFET
Published Mar 26, 2016
Detailed Description HFS10N65U HFS10N65U 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Ro...
Datasheet PDF File HFS10N65U PDF File

HFS10N65U
HFS10N65U


Overview
HFS10N65U HFS10N65U 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 29 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.
8 ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested Oct 2013 BVDSS = 650 V RDS(on) typ = 0.
8 ȍ ID = 9.
5 A TO-220F 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 9.
5* 6.
0* 38* ρ30 470 9.
5 5.
0 4.
5 PD TJ, TSTG TL Power Dissipation (TC = 25୅) - Derate above 25୅ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 50 0.
40 -55 to +150 300 * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RșJC RșJA Parameter Junction-to-Case Junction-to-Ambient Typ.
--- Max.
2.
5 62.
5 Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΀ΔΥ͑ͣͤ͑͢͡ HFS10N65U Package Marking and Odering Information Device Marking HFS10N65U HFS10N65U Week Marking YWWX YWWXg Package TO-220F TO-220F Packing Tube Tube Quantity 50 50 RoHS Status Pb Free Halogen Free Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 4.
75 A 2.
5 -- Off Characteristics BVDSS ǻBVDSS /ǻTJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Ga...


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