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HFS12N65S

SemiHow
Part Number HFS12N65S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFS12N65S Aug 2009 HFS12N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.67 ȍ ID = 12 A FEATURES ‰ Originati...
Datasheet PDF File HFS12N65S PDF File

HFS12N65S
HFS12N65S

Overview
HFS12N65S Aug 2009 HFS12N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.
67 ȍ ID = 12 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 38 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.
67 ȍ (Typ.
) @VGS=10V ‰ 100% Avalanche Tested TO-220F 123 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 12* 7.
4* 48* ρ30 860 12 22.
5 4.
5 PD TJ, TSTG TL Power Dissipation (TC = 25୅) - Derate above 25୅ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 51 0.
41 -55 to +150 300 *Drain current limited by maximum junction temperature Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol RșJC RșJA Parameter Junction-to-Case Junction-to-Ambient Typ.
--- Max.
2.
43 62.
5 Units ୅/W క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΦΘ͑ͣͪ͡͡ HFS12N65S Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ᒺ VGS = 10 V, ID = 6.
0 A 2.
0 -- Off Characteristics BVDSS ǻBVDSS /ǻTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 ᒺ ID = 250 ᒺ, Referenced to 25୅ VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125୅ VGS = 30 V, VDS = 0 V V...


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