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HFS12N60U

SemiHow
Part Number HFS12N60U
Manufacturer SemiHow
Description N-Channel MOSFET
Published Mar 26, 2016
Detailed Description HFS12N60U HFS12N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Ro...
Datasheet PDF File HFS12N60U PDF File

HFS12N60U
HFS12N60U


Overview
HFS12N60U HFS12N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 42 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested July 2014 BVDSS = 600 V RDS(on) typ = 0.
53 ȍ ID = 12 A TO-220F 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 12* 7.
4* 48* ρ30 840 12 5.
2 4.
5 PD TJ, TSTG TL Power Dissipation (TC = 25୅) - Derate above 25୅ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 52 0.
42 -55 to +150 300 * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol RșJC RșJA Parameter Junction-to-Case Junction-to-Ambient Typ.
--- Max.
2.
4 62.
5 Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͥ͑͢͡ HFS12N60U Package Marking and Odering Information Device Marking HFS12N60U HFS12N60U Week Marking YWWX YWWXg Package TO-220F TO-220F Packing Tube Tube Quantity 50 50 RoHS Status Pb Free Halogen Free Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions On Characteristics Min VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 6 A Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ VDS = 600 V, VGS = 0...


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